PART |
Description |
Maker |
SSR40C20 SSR40C30 SSR40C30CT SSR40C20CTM |
20 A, 200 V, SILICON CARBIDE, RECTIFIER DIODE, TO-254AA 40A / 300V Schottky Silicon Carbide Centertap Rectifier
|
SOLID STATE DEVICES INC Solid States Devices, Inc
|
SDT10S60 |
Silicon Carbide Schottky Diode 碳化硅肖特基二极 From old datasheet system Silicon Carbide Schottky Diodes - 10A diode in TO220-2 package
|
Infineon Technologies AG
|
STPSC606 STPSC606D STPSC606G-TR |
6 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE, TO-220AC 600 V power Schottky silicon carbide diode
|
STMicroelectronics
|
SHD617052BN SHD617052AN SHD617052AP SHD617052BP SH |
HERMETIC SILICON CARBIDE RECTIFIER 5 A, SILICON CARBIDE, RECTIFIER DIODE
|
Sensitron Semiconductor
|
GM195 |
P N P S I L I CO N P L A N A R M E D I UM POWE R T R A N S I S T O R
|
E-Tech Electronics LTD
|
GM195A |
P N P S I L I C O N P L A N A R M E D I UM POWE R T R A N S I S T O R
|
E-Tech Electronics LTD
|
SDP10S30 SDB10S30SMD SDT10S30 |
Silicon Carbide Schottky Diodes - 10A diode in TO220-3 package Silicon Carbide Schottky Diodes - 10A diode in TO263 package Silicon Carbide Schottky Diodes - 10A diode in TO220-2 package
|
Infineon
|
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
CPMF-1200-S080B |
Silicon Carbide MOSFET
|
CREE
|
SHDC624172 SHDC624172D 5341 |
HERMETIC SILICON CARBIDE RECTIFIER
|
Sensitron
|
SHD618112AN SHD618112AP SHD618112BN SHD618112BP SH |
HERMETIC SILICON CARBIDE RECTIFIER
|
Sensitron
|
|